DocumentCode :
1384162
Title :
Stress induced anisotropy effect for SAL films in magnetoresistive elements
Author :
Ishi, Tsutoinu ; Suzuki, Tetsuhiro ; Ishiwata, Nobuyula ; Yamada, Kazuhiko
Author_Institution :
Functional Devices Res. Lab., NEC Corp., Tokyo, Japan
Volume :
32
Issue :
5
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
3389
Lastpage :
3391
Abstract :
The stress configuration of SAL (soft adjacent layer)-biased magnetoresistive (MR) elements has been analyzed, in order to study the stress-induced anisotropy effect on the MR transfer characteristics. The stress analysis, on the basis of stress measurement results in the single-layer sheet films that formed the MR elements, shows that anisotropic tensile stress of around 100 to 300 MPa is induced in the element height direction in the SAL film with an open-pattern edge structure. Furthermore, we calculated the MR transfer curves using a micromagnetic model for samples with different saturation magnetostriction constant (λs) value for SAL films. Assuming anisotropic tensile stress of 300 MPa in the element height direction throughout the entire track region, a desirable λs value for SAL films is in the range from +1×10-6 to -2×10-6, because the stress-induced anisotropy in the SAL does not seriously affect the μR transfer curves
Keywords :
induced anisotropy (magnetic); magnetic heads; magnetic recording; magnetic thin films; magnetoresistive devices; magnetostriction; soft magnetic materials; stress effects; MR transfer characteristics; SAL film; magnetoresistive element; micromagnetic model; open-pattern edge structure; saturation magnetostriction constant; single-layer sheet film; soft adjacent layer; stress induced anisotropy; tensile stress; Anisotropic magnetoresistance; Magnetic analysis; Magnetic anisotropy; Magnetic heads; Magnetostriction; Semiconductor films; Stress measurement; Temperature; Tensile stress; Thermal stresses;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.538633
Filename :
538633
Link To Document :
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