Title :
FeN/AlN multilayer films for high moment thin film recording heads
Author :
Sin, Kyusik ; Wang, Shan X.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Soft magnetic FeN films (Hc<1 Oe) on Al2O 3-TiC and Si substrates were obtained by lamination with thin AlN interlayers. These laminated films exhibit significantly different magnetic properties when grown on Al2O3-TiC substrates compared with those on silicon substrates. Vacuum-annealing at 300°C decreases Hc of the films on Al2O3-TiC whereas it increases that on Si. These results are correlated with the variation of the γ´-Fe4N phase in the films
Keywords :
X-ray diffraction; aluminium compounds; annealing; coercive force; ferromagnetic materials; iron compounds; laminations; magnetic anisotropy; magnetic heads; magnetic multilayers; magnetic thin film devices; soft magnetic materials; sputtered coatings; γ´-Fe4N phase; 300 C; Al2O3-TiC; Al2O3-TiC substrate; FeN-AlN; FeN/AlN multilayer films; RF diode sputtering; Si; Si substrate; X-ray diffraction spectra; anisotropy field; coercive field; high moment thin film recording heads; lamination; magnetic properties; soft magnetic FeN films; thin AlN interlayers; vacuum annealing; Lamination; Magnetic films; Magnetic heads; Magnetic multilayers; Magnetic recording; Nonhomogeneous media; Semiconductor films; Soft magnetic materials; Substrates; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
