FeN/AlN multilayer films for high moment thin film recording heads

Author

Sin, Kyusik ; Wang, Shan X.

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

3509

Lastpage

3511

Abstract

Soft magnetic FeN films (H_c<1 Oe) on Al₂O ₃-TiC and Si substrates were obtained by lamination with thin AlN interlayers. These laminated films exhibit significantly different magnetic properties when grown on Al₂O₃-TiC substrates compared with those on silicon substrates. Vacuum-annealing at 300°C decreases H_c of the films on Al₂O₃-TiC whereas it increases that on Si. These results are correlated with the variation of the γ´-Fe₄N phase in the films

Keywords

X-ray diffraction; aluminium compounds; annealing; coercive force; ferromagnetic materials; iron compounds; laminations; magnetic anisotropy; magnetic heads; magnetic multilayers; magnetic thin film devices; soft magnetic materials; sputtered coatings; γ´-Fe₄N phase; 300 C; Al₂O₃-TiC; Al₂O₃-TiC substrate; FeN-AlN; FeN/AlN multilayer films; RF diode sputtering; Si; Si substrate; X-ray diffraction spectra; anisotropy field; coercive field; high moment thin film recording heads; lamination; magnetic properties; soft magnetic FeN films; thin AlN interlayers; vacuum annealing; Lamination; Magnetic films; Magnetic heads; Magnetic multilayers; Magnetic recording; Nonhomogeneous media; Semiconductor films; Soft magnetic materials; Substrates; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.538673

Filename

538673