Title :
How to include the dependency of the RDS(on) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
Author :
Kolar, Johann W. ; Ertl, Hans ; Zach, Franz C.
Author_Institution :
Power Electron. Sect., Wien Univ., Austria
fDate :
6/1/1998 12:00:00 AM
Abstract :
In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors
Keywords :
DC-AC power convertors; PWM invertors; approximation theory; losses; power MOSFET; power semiconductor switches; semiconductor device models; conduction losses; drain current; on-state resistance; power MOSFETs; power transistor dimensioning; quadratic approximation; three-phase HF PWM inverters; turn-on behavior; Bridge circuits; Leg; MOSFET circuits; Phase modulation; Power MOSFET; Power transistors; Pulse width modulation; Pulse width modulation converters; Pulse width modulation inverters; Voltage;
Journal_Title :
Industrial Electronics, IEEE Transactions on
