Title :
Modeling of the transverse delays in GaAs MESFETs
Author :
Goel, Ashok K. ; Westgate, Charles R.
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
fDate :
10/1/1988 12:00:00 AM
Abstract :
A computer-efficient algorithmd for calculating the transverse propagation delays in GaAs MESFETs is presented. The MESFET has been modeled as two lossy transmission lines coupled to each other by the gate-drain capacitances. The model is valid for MESFETs with submicron gate lengths as well and is suitable for inclusion in computer-aided design (CAD) tools. The algorithm has been used to study the dependences of the transverse propagation delays in GaAs MESFETs on the MESFET dimension and other gate parameters. Results can be used for the optimization of high-speed circuits, and, in particular, picosecond circuits
Keywords :
III-V semiconductors; Schottky gate field effect transistors; delays; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; CAD; GaAs; III-V semiconductors; MESFETs; computer-aided design; computer-efficient algorithm; distributed element equivalent circuit; gate parameters; gate-drain capacitances; high speed circuit optimisation; lossy transmission lines; microwave device model; model; picosecond circuits; submicron gate lengths; transverse propagation delays; Delay effects; Electrodes; Electrons; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Parasitic capacitance; Propagation delay; Propagation losses;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
