DocumentCode :
1384653
Title :
Analyses of stacking fault density in Co-alloy thin films by high-resolution transmission electron microscopy
Author :
Ishikawa, Akira ; Sinclair, Robert
Author_Institution :
Data Storage & Retrieval Syst. Div., Hitachi Ltd., Odawara, Japan
Volume :
32
Issue :
5
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
3605
Lastpage :
3607
Abstract :
The density of stacking faults in Co-alloy thin films has been analyzed to study the effect of the fault density on the magnetic properties. The stacking fault density is measured using high-resolution transmission electron microscopy with a Ta or Pt content of 2-8 at.%. The average number of the faults which exist in one Co unit cell is 0.1-0.2. The stacking fault density increases with the increase of Ta or Pt content. The fault densities for the CoCrPt films are 10-30% higher than those of the CoCrTa films. Substrate biasing slightly increases the stacking fault density. The influence of the crystal perfection on the anisotropy field seems small compared to other effects such as an in-plane strain
Keywords :
chromium alloys; cobalt alloys; ferromagnetic materials; magnetic anisotropy; magnetic thin films; platinum alloys; stacking faults; tantalum alloys; transmission electron microscopy; Co-alloy thin film; CoCrPt; CoCrTa; anisotropy field; crystal perfection; high-resolution transmission electron microscopy; in-plane strain; magnetic properties; stacking fault density; substrate biasing; Anisotropic magnetoresistance; Chromium; Density measurement; Magnetic analysis; Magnetic films; Magnetic properties; Stacking; Substrates; Transistors; Transmission electron microscopy;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.538704
Filename :
538704
Link To Document :
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