Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity

Author

Sharfin, W.F. ; Mooradian, A. ; Harding, C.M. ; Waters, R.G.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

26

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

1756

Lastpage

1763

Abstract

The relatively flat lateral gain profile across a wide-strip laser diode does not allow sufficient overlap with the Gaussian fundamental mode of an external resonator to achieve saturation of the gain in the wings of the mode profile. Thus, parasitic free-running oscillation of the diode in an external-cavity laser is permitted by residual facet reflectivity of the antireflection-coated diode, and degrades the lateral-mode-selectivity of the external resonator at injection currents exceeding the threshold of the solitary diode. A relation between the maximum injection current at which the external-cavity laser will operate in a single mode and the diode´s facet reflectivity is given

Keywords

antireflection coatings; laser cavity resonators; laser modes; reflectivity; semiconductor junction lasers; antireflection-coated diode; external-cavity diode lasers; free-running oscillation; injection currents; lateral gain profile; lateral-mode-selectivity; residual facet reflectivity; single mode; wide-strip laser diode; Apertures; Degradation; Diode lasers; Laboratories; Laser feedback; Laser modes; Laser theory; Mirrors; P-n junctions; Reflectivity;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.60899

Filename

60899