DocumentCode :
1384824
Title :
Effects of pre-existing interfacial defects on the stress profile in aluminum interconnection lines
Author :
Shen, Yu-Lin
Author_Institution :
Dept. of Mech. Eng., New Mexico Univ., Albuquerque, NM, USA
Volume :
21
Issue :
1
fYear :
1998
fDate :
3/1/1998 12:00:00 AM
Firstpage :
127
Lastpage :
131
Abstract :
The profile of thermal stresses in aluminum interconnection lines, with the presence of local debonded areas between the line and the surrounding dielectric, is studied numerically. Local interfacial debonding is presumably due to contamination during the line patterning process. Various geometrical features of the interconnect and the debond segment are assumed, and the resulting stress fields are examined through two-dimensional (2-D) and three-dimensional (3-D) finite element analyses. It is found that interfacial debonding results in a local reduction of stress in aluminum, with the effect becoming larger as the line aspect ratio increases. The location of debond also influences the line stress. Implications of the findings to the interconnect reliability, particularly stress-induced voiding in aluminum lines, are discussed
Keywords :
aluminium; finite element analysis; integrated circuit interconnections; integrated circuit reliability; thermal stresses; Al; debond segment; finite element analyses; geometrical features; interconnect reliability; interconnection lines; interfacial debonding; line aspect ratio; line patterning process; local debonded areas; pre-existing interfacial defects; stress fields; stress profile; stress-induced voiding; thermal stresses; Aluminum; Contamination; Dielectrics; Finite element methods; Integrated circuit interconnections; Plasma temperature; Tensile stress; Thermal stresses; Thermomechanical processes; Two dimensional displays;
fLanguage :
English
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9886
Type :
jour
DOI :
10.1109/95.679042
Filename :
679042
Link To Document :
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