DocumentCode :
1385091
Title :
Noise characteristics of nonlinear semiconductor optical amplifiers in the Gaussian limit
Author :
Shtaif, Mark ; Eisenstein, Gadi
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
32
Issue :
10
fYear :
1996
fDate :
10/1/1996 12:00:00 AM
Firstpage :
1801
Lastpage :
1809
Abstract :
This paper addresses noise properties of nonlinear semiconductor optical amplifiers. From a basic point of view, noise properties of nonlinear optical amplifiers are sufficiently different from those of linear amplifiers to warrant detailed modeling which has not been formulated previously. From a practical point of view, nonlinear semiconductor optical amplifiers are important for future all-optical signal-processing applications which may involve the operation of these devices in a saturated regime. Nonlinear amplifiers are also common in systems operating near 1300 nm and in integrated booster amplifiers. Under nonlinear operating conditions, amplifier noise contains a narrow-band contribution that comes about due to the nonlinear coupling of noise and gain. The more conventional broadband spontaneous noise also changes as the inversion factor becomes power-dependent and varies along the amplifier axis. We analyze noise in nonlinear amplifiers in the Gaussian limit (meaning, for fields consisting of large photon numbers) for CW or NRZ modulated signals and separately for short pulses. We consider the case of a single input as well as configurations of multi-input signals interacting via four-wave mixing. Using a specific detection system for the calculations of electronic signal-to-noise ratios, we demonstrate a reduction in the narrow-band electronic noise due to saturation in the single input case. We also demonstrate a vast advantage of using short pulses in four-wave-mixing applications
Keywords :
Gaussian noise; electro-optical modulation; laser noise; laser theory; laser transitions; multiwave mixing; optical information processing; optical saturation; semiconductor device models; semiconductor device noise; semiconductor lasers; 1300 nm; Gaussian limit; NRZ modulated signals; all-optical signal-processing applications; amplifier axis; broadband spontaneous noise; detection system; electronic signal-to-noise ratios; four-wave mixing; integrated booster amplifiers; inversion factor; large photon numbers; modeling; multi-input signals; narrow-band contribution; noise characteristics; noise properties; nonlinear coupling; nonlinear optical amplifiers; nonlinear semiconductor optical amplifiers; power-dependent; saturated regime; short pulses; Broadband amplifiers; Narrowband; Nonlinear optical devices; Optical amplifiers; Optical noise; Pulse amplifiers; Pulse modulation; Semiconductor device noise; Semiconductor optical amplifiers; Signal to noise ratio;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.538787
Filename :
538787
Link To Document :
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