DocumentCode
1385243
Title
Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
Author
Lifang Xu ; Patel, Dinesh ; Menoni, C.S. ; Pikal, J.M. ; Jeng-Ya Yeh ; Huang, J.Y.T. ; Mawst, L.J. ; Tansu, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Volume
4
Issue
6
fYear
2012
Firstpage
2382
Lastpage
2389
Abstract
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.
Keywords
III-V semiconductors; arsenic compounds; electron-hole recombination; gallium compounds; indium compounds; photoconductivity; photoluminescence; semiconductor quantum wells; InGaAsN; carrier recombination dynamics; first quantized electron state; heavy hole state; light hole state; photoluminescence; polarized photocurrent measurement; strain compensated quantum well; temperature 10 K to 300 K; wavelength 1300 nm; Gallium arsenide; Indium gallium arsenide; Laser excitation; Photoconductivity; Quantum wells; Radiative recombination; Temperature measurement; 1.3-$muhbox{m}$
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2012.2233465
Filename
6378385
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