AlInGaAs-AlGaAs strained single-quantum-well diode lasers

Author

Wang, C.A. ; Walpole, J.N. ; Choi, H.K. ; Missaggia, L.J.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

3

Issue

1

fYear

1991

Firstpage

4

Lastpage

5

Abstract

Diode lasers with a strained AlInGaAs active layer and AlGaAs confining and cladding layers are reported. Broad-stripe devices were fabricated in graded-index separate-confinement heterostructures grown by organometallic vapor-phase epitaxy on GaAs substrates and containing a single Al/sub y/In/sub x/Ga/sub 1-x-y/As quantum well with 0.12>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; life testing; semiconductor device testing; semiconductor junction lasers; 20 h; 78 to 81 percent; 890 to 785 nm; AlInGaAs-AlGaAs; CW operations; GaAs substrates; active layer; cladding layers; confining layers; constant current; differential quantum efficiency; emission wavelength; graded-index separate-confinement heterostructures; increasing Al content; junction side up; life testing; organometallic vapor-phase epitaxy; reliability test; saw-cut diode lasers; strained single-quantum-well diode lasers; threshold current density; uncoated broad-area device; Artificial intelligence; Atomic beams; Atomic layer deposition; Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Substrates; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.68029

Filename

68029