DocumentCode
1385341
Title
Vertically integrated silicon-on-insulator waveguides
Author
Soref, R.A. ; Cortesi, E. ; Namavar, F. ; Friedman, L.
Author_Institution
Rome Air Dev. Center, Hanscom AFB, MA, USA
Volume
3
Issue
1
fYear
1991
Firstpage
22
Lastpage
24
Abstract
A SiO/sub 2/-Si-SiO/sub 2/-Si-SiO/sub 2/-Si structure produced by the separation by implantation of oxygen (SIMOX) process used for dual vertically integrated waveguiding in silicon at lambda =1.3 mu m is discussed. Independent waveguiding is observed when 2- mu m-thick Si cores are separated by 0.36- mu m-thick SiO/sub 2/. Coupled waveguiding is found for an 0.12- mu m intercore oxide thickness.<>
Keywords
elemental semiconductors; integrated optics; optical waveguides; optical workshop techniques; silicon; silicon compounds; 0.12 micron; 0.36 micron; 1.3 micron; 2 micron; SIMOX; Si cores; Si-on-insulator waveguides; SiO/sub 2/-Si-SiO/sub 2/-Si-SiO/sub 2/-Si structure; coupled waveguiding; dual vertically integrated waveguiding; intercore oxide thickness; separation by implantation of oxygen; vertical integration; Annealing; Directional couplers; Epitaxial growth; Integrated optics; Nonhomogeneous media; Optical coupling; Optical waveguides; Silicon on insulator technology; Substrates; Tellurium;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.68036
Filename
68036
Link To Document