Title :
Noise in semiconductor laser amplifiers with quantum box structure
Author :
Komori, Kazuhiro ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
The low-noise properties of a quantum-box traveling-wave semiconductor laser amplifier (QB-TW-SLA) are discussed. The gain and population-inversion parameter of a quantum-box structure are precisely expressed using density matrix theory. Due to sharp gain characteristics as well as a small population inversion parameter, dominant two-beat noise is significantly reduced, even in a solitary device without a narrow bandpass filter. The noise figure can be reduced to 3.5 dB.<>
Keywords :
electron device noise; population inversion; semiconductor junction lasers; semiconductor quantum dots; density matrix theory; diode laser gain; diode laser noise; dominant two-beat noise; low-noise properties; noise figure; population-inversion; quantum box structure; quantum-box traveling-wave semiconductor laser amplifier; semiconductor laser amplifiers; sharp gain characteristics; solitary device; Band pass filters; Laser noise; Laser theory; Low-noise amplifiers; Noise reduction; Quantum mechanics; Quantum well lasers; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
