Title :
Electrical and Magnetic Properties of Higher Manganese Silicide Nanostructures
Author :
Kang, Sungmu ; Brewer, Greg ; Sapkota, Keshab R. ; Pegg, Ian.L. ; Philip, John
Author_Institution :
Vitreous State Lab., Catholic Univ. of America, Washington, DC, USA
fDate :
5/1/2012 12:00:00 AM
Abstract :
Higher manganese silicide, Mn15Si26, nanostructures were grown using CVD using a coordination compound precursor. These nanostructures exhibit p-type semiconducting behavior. They also exhibit a nonzero magnetic moment even at room temperature and the magnetic transition temperature appears to be near 330 K.
Keywords :
chemical vapour deposition; magnetic moments; magnetic semiconductors; magnetic thin films; magnetic transition temperature; magnetoelastic effects; manganese compounds; nanomagnetics; nanostructured materials; CVD; Mn15Si26; coordination compound precursor; electrical properties; magnetic properties; magnetic transition temperature; manganese silicide nanostructures; nonzero magnetic moment; p-type semiconducting behavior; temperature 293 K to 298 K; temperature 330 K; Diffraction; Manganese; Nanowires; Silicides; Silicon; Substrates; CVD; nanostructured materials; semiconductor nanostructures; silicides;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2177471
