High Current Gain Microwave Performance of Organic Metal-Base Transistor

Author

Yusoff, Abd Rashid bin Mohd ; Da Silva, Wilson Jose ; Song, Ying ; Holz, Eikner ; Schulz, Dietmar ; Shuib, Saiful Anuar

Volume

11

Issue

3

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

435

Lastpage

436

Abstract

We report the realization of 140 nm emitter TPD/CuPc (N,N´-diphenyl-N,N´-bis(3-methylphenyl)-(1,1´-biphenyl)-4,4´-diamine/copper phthalocyanine) with cutoff frequency fT = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.

Keywords

electrical resistivity; microwave transistors; organic field effect transistors; organic semiconductors; N,N´-diphenyl-N,N´-bis(3-methylphenyl)-(1,1´-biphenyl)-4, 4´-diamine-copper phthalocyanine; aluminum grid; cutoff frequency; double hole injection layer; frequency 300 kHz; high current gain microwave performance; high-resistivity p-type float-zone silicon collector; organic metal-base transistor; size 140 nm; Cutoff frequency; Microwave transistors; Performance evaluation; Transistors; Current gain; metal-base transistor (MBT); microwave performance;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2011.2177472

Filename

6092501