Effects of Ion Species on SEB Failure Voltage of Power DMOSFET

Author

Liu, Sandra ; Lauenstein, Jean-Marie ; Ferlet-Cavrois, Véronique ; Marec, Ronan ; Hernandez, Francisco ; Scheick, Leif ; Bezerra, Francoise ; Muschitiello, Michele ; Poivey, Christian ; Sukhaseum, Nicolas ; Coquelet, Lemuel ; Cao, Huy ; Carrier, Douglass

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

Volume

58

Issue

6

fYear

2011

Firstpage

2991

Lastpage

2997

Abstract

This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET). The analyses show the determining factor of tested SEB failure voltage is the ion species itself rather than test or beam conditions such as initial beam energy, surface linear energy transfer (LET), ion range, or ionized charge. Also, results from five test facilities and five test setups are compared to determine if there will be differences in test results when different test setups or different heavy ion accelerator facilities were used.

Keywords

power MOSFET; radiation hardening (electronics); beam conditions; double diffused metal oxide silicon field effect transistor; heavy ion accelerator facilities; initial beam energy; ion range; ion species; ionized charge; power DMOSFET; sensitive engineering power; single event burnout failure voltage; surface linear energy transfer; test conditions; Correlation; Epitaxial growth; Gold; Ion beams; Power MOSFET; Heavy ion species; power MOSFET; single event burnout; single event effect;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2172958

Filename

6092520