Title :
Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs
Author :
Shea, Patrick M. ; Shen, Z. John
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit QGD × RDSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full VDS biasing of 150 V and full VGS biasing of -16 V simultaneously.
Keywords :
ion beam effects; power MOSFET; radiation hardening (electronics); silicon-on-insulator; SEB; SEGR; SOI lateral power MOSFET; Si; TCAD simulations; art commercial trench VDMOS; electrical performance; experimental investigation; ion radiation; rad-hard planar VDMOS devices; single event effects; voltage -16 V; voltage 150 V; Annealing; Leakage current; Logic gates; MOSFETs; Radiation effects; Sensitivity; Silicon on insulator technology; Heavy ions; LDMOS; power devices; radiation effects; single event burnout; single event gate rupture;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172956
