Title :
Thin-film, accumulation-mode p-channel SOI MOSFETs
Author_Institution :
Hewlett Packard CT R&D, Palo Alto, CA
fDate :
3/3/1988 12:00:00 AM
Abstract :
Electrical characteristics of thin-film (100 nm), accumulation-mode SOI p-channel MOSFETs are reported and compared to simulation. In the OFF regime, the p-type channel is fully depleted. As a result, very low values of leakage current are obtained. Very good threshold voltage control is also obtained
Keywords :
insulated gate field effect transistors; thin film transistors; SIMOX wafers; SOI MOSFETs; Si; TFT; accumulation-mode; leakage current; p-channel; simulation; thin film transistors; threshold voltage control;
Journal_Title :
Electronics Letters
