Single-electron device simulation

Author

Scholze, Andreas ; Schenk, A. ; Fichtner, Wolfgang

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

47

Issue

10

fYear

2000

fDate

10/1/2000 12:00:00 AM

Firstpage

1811

Lastpage

1818

Abstract

A three-dimensional (3-D) simulator is presented which uses a linear-response approach to simulate the conductance of semiconductor single-electron transistors at the solid-state level. The many-particle groundstate of the quantum dot, weakly connected to the drain and the source reservoir, is evaluated in a self-consistent manner including quantum-mechanical many-body interactions. A transfer-Hamiltonian approach is used to compute the tunneling rates for the coupling of the quantum dot levels to the macroscopic reservoirs on the basis of realistic barrier potentials. The simulator was applied to a GaAs/AlGaAs example structure. We discuss the conductance characteristic and the capacitances as well as the microscopic structure of the quantum dot

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; many-body problems; semiconductor device models; semiconductor quantum dots; single electron transistors; tunnelling; GaAs-AlGaAs; barrier potentials; capacitance; conductance characteristic; device simulation; linear-response approach; macroscopic reservoirs; many-particle groundstate; quantum dot levels; quantum-mechanical many-body interactions; single-electron devices; solid-state level; three-dimensional simulator; transfer-Hamiltonian approach; tunneling rates; Computational modeling; Gallium arsenide; Quantum computing; Quantum dots; Reservoirs; Single electron devices; Single electron transistors; Solid modeling; Solid state circuits; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.870553

Filename

870553