Title :
Memory cell simulation on the nanometer scale
Author :
Müller, Heinz-Olaf ; Mizuta, Hiroshi
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fDate :
10/1/2000 12:00:00 AM
Abstract :
We describe a toolset of simulation programs and its use for the simulation of a memory cell based on Coulomb blockade. We present simulation results both for the main parameters of the memory cell and the influence of parasitic effects. We point out that both setting up specific programs and providing data exchange between them is necessary in order to describe the memory cell to a realistic extent
Keywords :
Coulomb blockade; cellular arrays; circuit simulation; field effect memory circuits; integrated circuit modelling; integrated memory circuits; memory architecture; Coulomb blockade; FET memory ICs; data exchange; memory architecture; memory cells; nanometer scale; parasitic effects; simulation programs; Circuit simulation; Fabrication; Helium; Integrated circuit interconnections; MOSFETs; Memory architecture; Packaging; Silicon on insulator technology; Single electron memory; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
