Title :
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs
Author :
Abramo, Antonio ; Cardin, Andrew ; Selmi, Luca ; Sangiorgi, Enrico
Author_Institution :
DIEGM, Udine Univ., Italy
fDate :
10/1/2000 12:00:00 AM
Abstract :
A solver for the two-dimensional (2-D) Schrodinger equation based on the k-space representation of the solution has been developed and applied to the simulation of 2-D electrostatic quantum effects in nano-scale MOS transistors. This paper presents the mathematical framework of the simulator, addresses the related accuracy and efficiency problems, and discusses the simulations performed to validate it. Furthermore, the 2-D quantum effects observed in the simulation of charge densities in tens-hundreds nanometer scale MOS structures are described
Keywords :
MOSFET; Schrodinger equation; electric charge; elemental semiconductors; nanotechnology; semiconductor device models; silicon; 2D Schrodinger equation; 2D electrostatic quantum effects; 2D quantum mechanical simulation; Si; Si MOSFETs; charge densities; charge distribution; k-space representation; nano-scale MOS transistors; Computational modeling; Distributed computing; Effective mass; MOSFETs; Quantization; Quantum computing; Quantum mechanics; Schrodinger equation; Silicon; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
