A multidimensional laser simulator for edge-emitters including quantum carrier capture

Author

Witzigmann, Bernd ; Witzig, Andreas ; Fichtner, Wolfgang

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

47

Issue

10

fYear

2000

fDate

10/1/2000 12:00:00 AM

Firstpage

1926

Lastpage

1934

Abstract

A multidimensional semiconductor laser simulator is presented which follows a rate equation approach for the coupling between optics and electronics. Capture and emission rates for the bound and free carriers are used for the quantum well. The electronic equations and the optical equations are solved in a self-consistent manner for one, two, and three dimensions. As an example, an InGaAs quantum-well ridge laser is analyzed, and the multidimensional simulation approach for Fabry-Perot device structures is discussed. A three-dimensional (3-D) simulation of a device with a truncated contact shows the applicability of the simulator to complex laser cavity designs

Keywords

Fabry-Perot resonators; laser cavity resonators; laser theory; numerical analysis; optical hole burning; quantum well lasers; semiconductor device models; semiconductor lasers; simulation; 3D simulation; Fabry-Perot device structures; InGaAs; InGaAs quantum-well ridge laser; capture rates; complex laser cavity designs; edge-emitters; electronic equations; emission rates; multidimensional laser simulator; optical equations; quantum carrier capture; quantum well; rate equation approach; semiconductor laser simulator; three-dimensional simulation; truncated contact; Analytical models; Equations; Fabry-Perot; Indium gallium arsenide; Multidimensional systems; Optical coupling; Optical design; Quantum well lasers; Semiconductor lasers; Stimulated emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.870574

Filename

870574