Title :
A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
Author :
Ouyang, Qiqing ; Chen, Xiangdong ; Mudanai, Sivakumar P. ; Wang, Xin ; Kencke, David L. ; Tasch, Al F. ; Register, Leonard F. ; Banerjee, Sanjay Kumar
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
10/1/2000 12:00:00 AM
Abstract :
A novel Si/SiGe bandgap engineered pMOSFET structure, called a high mobility heterojunction transistor (HMHJT), is proposed. Reduced short-channel effects and high drive current are predicted in this new device. Simulation results of devices with 100-nm physical gate lengths are presented. Physical effects are illustrated, and the performance is compared to the conventional Si devices. For low standby power or low leakage (high VT) applications, the off-state leakage current due to drain induced barrier lowering (DIBL) or bulk punchthrough is substantially suppressed, and a very high Ion/Ioff ratio of 6×107 is obtained in a HMHJT without any anti-punchthrough implant. This ratio is a factor of 180 higher than that of a fabricated, conventional Si device with a similar threshold voltage found in the literature. On the other hand, for lower operating power (low VT) applications, an HMHJT has a drive current 80% higher compared to an optimized Si device, while satisfying the same criteria for the off-state leakage current
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; quantum well devices; semiconductor device models; semiconductor materials; silicon; 100 nm; DIBL; Si-SiGe-Si; Si-SiGe-Si QW channel; Si/SiGe heterojunction pMOSFET; bandgap engineered PMOSFET structure; bulk punchthrough; drain induced barrier lowering; drive current enhancement; high mobility heterojunction transistor; low leakage applications; low standby power applications; lower operating power applications; offstate leakage current suppression; p-channel device; quantum-well channel; short-channel effects reduction; threshold voltage; Germanium silicon alloys; Heterojunctions; Implants; Leakage current; MOSFET circuits; Material properties; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
