A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network

Author

Yoon, Youngchang ; Kim, Jihwan ; Kim, Hyungwook ; An, Kyu Hwan ; Lee, Ockgoo ; Lee, Chang-Ho ; Kenney, James Stevenson

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

60

Issue

1

fYear

2012

Firstpage

77

Lastpage

88

Abstract

A dual-mode CMOS power amplifier (PA) with an integrated tunable matching network is presented. A switched capacitor is fully analyzed to implement a tunable matching network in terms of power-handling capability, tuning ratio, quality factor, and linearity. Based on the presented consideration, a 3.3-V 2.4-GHz fully integrated CMOS dual-mode PA is implemented in a 0.18-μm CMOS process. The PA has two power modes, high-power and low-power (LP), and each mode is optimally matched by the tunable matching network. The LP mode enables more than 50% dc current reduction from 0- to 10-dBm power range. The improved efficiency in this study is approximately twice that of other multimode CMOS PAs reported thus far.

Keywords

power amplifiers; radiofrequency amplifiers; switched capacitor networks; dual-mode CMOS RF power amplifier; integrated tunable matching network; multimode CMOS PA; power-handling capability; quality factor; switched capacitor; tuning ratio; CMOS integrated circuits; Capacitors; Impedance; Logic gates; Switches; Transistors; Tuning; CMOS; RF power amplifiers (PAs); switched capacitor; tunable amplifiers; tunable matching network;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2011.2175235

Filename

6093709