DocumentCode :
1385908
Title :
A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network
Author :
Yoon, Youngchang ; Kim, Jihwan ; Kim, Hyungwook ; An, Kyu Hwan ; Lee, Ockgoo ; Lee, Chang-Ho ; Kenney, James Stevenson
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
60
Issue :
1
fYear :
2012
Firstpage :
77
Lastpage :
88
Abstract :
A dual-mode CMOS power amplifier (PA) with an integrated tunable matching network is presented. A switched capacitor is fully analyzed to implement a tunable matching network in terms of power-handling capability, tuning ratio, quality factor, and linearity. Based on the presented consideration, a 3.3-V 2.4-GHz fully integrated CMOS dual-mode PA is implemented in a 0.18-μm CMOS process. The PA has two power modes, high-power and low-power (LP), and each mode is optimally matched by the tunable matching network. The LP mode enables more than 50% dc current reduction from 0- to 10-dBm power range. The improved efficiency in this study is approximately twice that of other multimode CMOS PAs reported thus far.
Keywords :
power amplifiers; radiofrequency amplifiers; switched capacitor networks; dual-mode CMOS RF power amplifier; integrated tunable matching network; multimode CMOS PA; power-handling capability; quality factor; switched capacitor; tuning ratio; CMOS integrated circuits; Capacitors; Impedance; Logic gates; Switches; Transistors; Tuning; CMOS; RF power amplifiers (PAs); switched capacitor; tunable amplifiers; tunable matching network;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2175235
Filename :
6093709
Link To Document :
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