DocumentCode :
1385929
Title :
Viscoelastic material behavior: models and discretization used in process simulator DIOS
Author :
Pomp, Andreas ; Zelenka, Stefan ; Strecker, Norbert ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Volume :
47
Issue :
10
fYear :
2000
fDate :
10/1/2000 12:00:00 AM
Firstpage :
1999
Lastpage :
2007
Abstract :
It is a known fact that melted glass, such as SiO2, shows viscoelastic behavior. But in the range of processing temperatures the mechanical properties of SiO2 vary strongly. While below 800°C the material behaves like an elastic solid, at temperatures above 1000°C it shows nearly pure viscous properties. In this paper, the governing equation, the so-called constitutive equation, describing viscoelastic behavior, and its discretization are presented. The oxide viscosity depends on the local amount of shear stresses which leads to inhomogeneous material behavior and a nonlinear theory. This new mechanical model was implemented into the process simulator DIOS-ISE. Some obtained simulation results are shown and discussed
Keywords :
glass; oxidation; semiconductor process modelling; silicon compounds; viscoelasticity; 800 to 1000 C; DIOS process simulator; SiO2; SiO2 melted glass; constitutive equation; discretization; inhomogeneous material; mechanical properties; nonlinear theory; numerical model; oxidation; shear stress; viscoelasticity; viscosity; Crystalline materials; Elasticity; Geometry; Mechanical factors; Modeling; Nonlinear equations; Stress; Temperature distribution; Temperature sensors; Viscosity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.870589
Filename :
870589
Link To Document :
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