An electrically and optically gate-controlled Schottky/2DEG varactor

Author

Anwar, Amro ; Nabet, Bahram ; Culp, James

Author_Institution

Dept. of Comput. Eng., Drexel Univ., Philadelphia, PA, USA

Volume

21

Issue

10

fYear

2000

Firstpage

473

Lastpage

475

Abstract

A novel gate-controlled varactor is reported. The three-terminal varactor is a modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts directly made to a two-dimensional electron gas (2DEG). The third, gate, contact is formed from highly doped n/sup +/ GaAs material to allow an open optical window that can be used for optical gating and mixing. Structure capacitance is less than 1 pF and a change of more than 30% from the zero bias capacitance is observed with the applied gate voltage. The capacitance also increases proportionally with applied light and inversely with the terminal voltage.

Keywords

Schottky barriers; harmonic oscillators (circuits); metal-semiconductor-metal structures; two-dimensional electron gas; varactors; voltage-controlled oscillators; AlGaAs-GaAs; Schottky contacts; applied gate voltage; applied light; capacitance; gate-controlled varactor; modulation-doped heterostructure; open optical window; optical gating; terminal voltage; three-terminal varactor; two-dimensional electron gas; Capacitance; Contacts; Electron optics; Epitaxial layers; Gallium arsenide; Optical mixing; Optical modulation; Schottky barriers; Varactors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.870605

Filename

870605