AC floating body effects in partially depleted floating body SOI nMOS operated at elevated temperature: an analog circuit prospective

Author

Tseng, Ying-Che ; Huang, W. Margaret ; Hwang, Clifford ; Woo, Jason C S

Author_Institution

Adv. Process Technol., Conexant Stem Inc., Newport Beach, CA, USA

Volume

21

Issue

10

fYear

2000

Firstpage

494

Lastpage

496

Abstract

AC floating body effects in PD SOI nMOSFETs operated at high temperature are investigated. Both source/body and drain/body junction diode characteristics are greatly influenced by temperature, significantly impacting the ac kink effect as well its low-frequency (LF) noise characteristics. This is especially true for the pre-dc kink operation at high temperature. The increase of junction thermal generation current becomes an important body charging source and induces the LF Lorentzian-like excess noise.

Keywords

MOSFET; semiconductor device noise; silicon-on-insulator; AC floating body effects; LF noise characteristics; Lorentzian-like excess noise; Si; ac kink effect; analog circuit prospective; body charging source; drain/body junction diode characteristics; high temperature operation; junction thermal generation current; nMOSFETs; partially depleted floating body SOI nMOS; pre-dc kink operation; source/body junction diode characteristics; Analog circuits; CMOS technology; Frequency; Integrated circuit technology; Leakage current; Low-frequency noise; MOS devices; MOSFET circuits; Semiconductor device noise; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.870612

Filename

870612