Title :
AC floating body effects in partially depleted floating body SOI nMOS operated at elevated temperature: an analog circuit prospective
Author :
Tseng, Ying-Che ; Huang, W. Margaret ; Hwang, Clifford ; Woo, Jason C S
Author_Institution :
Adv. Process Technol., Conexant Stem Inc., Newport Beach, CA, USA
Abstract :
AC floating body effects in PD SOI nMOSFETs operated at high temperature are investigated. Both source/body and drain/body junction diode characteristics are greatly influenced by temperature, significantly impacting the ac kink effect as well its low-frequency (LF) noise characteristics. This is especially true for the pre-dc kink operation at high temperature. The increase of junction thermal generation current becomes an important body charging source and induces the LF Lorentzian-like excess noise.
Keywords :
MOSFET; semiconductor device noise; silicon-on-insulator; AC floating body effects; LF noise characteristics; Lorentzian-like excess noise; Si; ac kink effect; analog circuit prospective; body charging source; drain/body junction diode characteristics; high temperature operation; junction thermal generation current; nMOSFETs; partially depleted floating body SOI nMOS; pre-dc kink operation; source/body junction diode characteristics; Analog circuits; CMOS technology; Frequency; Integrated circuit technology; Leakage current; Low-frequency noise; MOS devices; MOSFET circuits; Semiconductor device noise; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
