• DocumentCode
    1386022
  • Title

    High-frequency characterization of sub-0.25-μm fully depleted silicon-on-insulator MOSFETs

  • Author

    Chen, C.L. ; Mathews, R.H. ; Burns, J.A. ; Wyatt, P.W. ; Yost, D.-R. ; Chen, C.K. ; Fritze, M. ; Knecht, J.M. ; Suntharalingam, V. ; Soares, A. ; Keast, C.L.

  • Author_Institution
    Lincoln Lab., MIT, Cambridge, MA, USA
  • Volume
    21
  • Issue
    10
  • fYear
    2000
  • Firstpage
    497
  • Lastpage
    499
  • Abstract
    A cutoff frequency, fT, of 85 GHz was measured on a fully-depleted silicon-on-insulator (FDSOI) n-MOSFET with a gate length of 0.15 μm. The p-MOSFET with 0.22-μm gate length has an fT of 42 GHz. The high-frequency equivalent circuits were derived from scattering parameters for MOSFETs with various gate lengths. The effects of gate length and other device parameters on the performance of FDSOI MOSFETs at RF are discussed.
  • Keywords
    MOSFET; S-parameters; equivalent circuits; silicon-on-insulator; 0.15 micron; 0.22 micron; 42 GHz; 85 GHz; RF characteristics; cutoff frequency; fully depleted SOI MOSFET; gate length; high frequency equivalent circuit; scattering parameters; CMOS technology; Capacitance; Equivalent circuits; Length measurement; MOSFET circuits; Radio frequency; Scattering parameters; Silicides; Silicon on insulator technology; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.870613
  • Filename
    870613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1386022