Title :
High-frequency characterization of sub-0.25-μm fully depleted silicon-on-insulator MOSFETs
Author :
Chen, C.L. ; Mathews, R.H. ; Burns, J.A. ; Wyatt, P.W. ; Yost, D.-R. ; Chen, C.K. ; Fritze, M. ; Knecht, J.M. ; Suntharalingam, V. ; Soares, A. ; Keast, C.L.
Author_Institution :
Lincoln Lab., MIT, Cambridge, MA, USA
Abstract :
A cutoff frequency, fT, of 85 GHz was measured on a fully-depleted silicon-on-insulator (FDSOI) n-MOSFET with a gate length of 0.15 μm. The p-MOSFET with 0.22-μm gate length has an fT of 42 GHz. The high-frequency equivalent circuits were derived from scattering parameters for MOSFETs with various gate lengths. The effects of gate length and other device parameters on the performance of FDSOI MOSFETs at RF are discussed.
Keywords :
MOSFET; S-parameters; equivalent circuits; silicon-on-insulator; 0.15 micron; 0.22 micron; 42 GHz; 85 GHz; RF characteristics; cutoff frequency; fully depleted SOI MOSFET; gate length; high frequency equivalent circuit; scattering parameters; CMOS technology; Capacitance; Equivalent circuits; Length measurement; MOSFET circuits; Radio frequency; Scattering parameters; Silicides; Silicon on insulator technology; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
