DocumentCode :
1386025
Title :
Two-terminal millimeter-wave sources
Author :
Eisele, Heribert ; Haddad, George I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
46
Issue :
6
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
739
Lastpage :
746
Abstract :
Basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices, i.e., resonant-tunneling diodes (RTDs), transferred-electron devices (TEDs), and transit-time diodes. The paper focuses on devices for frequencies above 30 GHz, and an overview of recent research in this area and of various state-of-the-art laboratory results is given. As an outlook, the potential of some new material systems for high-power devices is discussed
Keywords :
Gunn devices; millimetre wave devices; millimetre wave generation; power combiners; resonant tunnelling diodes; transit time devices; 30 to 300 GHz; fabrication technologies; material systems; power-generation capabilities; resonant-tunneling diodes; transferred-electron devices; transit-time diodes; two-terminal millimeter-wave sources; Diodes; Etching; Fabrication; Frequency; Gallium arsenide; Gold; Gunn devices; Heat sinks; Millimeter wave technology; Oscillators;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.681195
Filename :
681195
Link To Document :
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