Title :
Role of Process Variation in the Radiation Response of FGMOS Devices
Author :
McNulty, Peter J. ; Poole, Kelvin F. ; Scheick, Leif Z. ; Yow, Sushan
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., Clemson, SC, USA
Abstract :
UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following exposure to ionizing radiation separates SEU-like mechanisms that generate anomalous decreases in erasure time from the uniform effects of TID.
Keywords :
CMOS integrated circuits; ultraviolet radiation effects; FGMOS devices; FGMOS memory die; SEU-like mechanisms; TID uniform effects; UV erasure times; ionizing radiation; process variation degree; radiation response; Ionizing radiation; Radiation effects; Single event upset; FGMOS; process variation; radiation effects; single-event effects; soft errors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172987
