Title :
Optimizing C Incorporation Into Magnesium Diboride
Author :
Chen, Soo K. ; Tan, Kwee Y. ; Tan, Kar B. ; Shaari, A.H. ; Kursumovic, Ahmed ; MacManus-Driscoll, Judith L.
Author_Institution :
Phys. Dept., Univ. Putra Malaysia, Serdang, Malaysia
fDate :
6/1/2011 12:00:00 AM
Abstract :
In this work, either SiC or separate Si and C (Si+C) powders of up to 10 weight percentage were in situ reacted with Mg and B (molar ratio of 1:2) and the superconducting properties compared. The latter shows a smaller a -axis lattice cell parameter as compared to the same level of SiC additions, indicating a higher level of C substitution. In those samples, a larger increase in the c -axis is also noticeable and a more severe degradation in the superconducting transition temperature is observed. However, reaction with SiC causes a greater broadening in the transition width. At both 5 K and 20 K, for samples reacted with SiC (up to 5 wt.%) a stronger improvement in the magnitude of critical current density, Jc, is obtained. On the other hand, samples reacted with (Si+C) show a weaker Jc dependence on field at 5 K because of higher C substitution. At 20 K, the Jc decreases more rapidly with field for the same level of SiC additions. Hence, for high temperature (20 K) and low field ( <;5 T) applications, reaction with SiC is preferred for obtaining higher Jc(H).
Keywords :
carbon; critical current density (superconductivity); lattice constants; magnesium compounds; superconducting materials; superconducting transition temperature; MgB2:C; carbon incorporation; critical current density; lattice cell parameter; magnesium diboride; superconducting transition temperature; temperature 20 K; temperature 5 K; Crystals; Doping; Lattices; Magnesium; Silicon; Silicon carbide; Superconducting transition temperature; ${rm MgB}_{2}$ ; Carbon substitution; critical current density; lattice parameters; superconducting transition temperature;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2010.2089420