Independently addressable VCSEL arrays on 3-μm pitch

Author

Chua, C.L. ; Thornton, R.L. ; Treat, D.W. ; Donaldson, R.M.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

10

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

917

Lastpage

919

Abstract

We present an exceedingly dense linear vertical-cavity surface-emitting laser (VCSEL) array with independently addressable elements on a staggered 3-μm pitch. Our devices utilize an all-epitaxial structure and operate at a wavelength of 813 mm with threshold currents below 400 μA. The high-packing density is enabled by combining transparent contact technology with a planar laterally oxidized device architecture. The array exhibits low interelement thermal crosstalk and has electrical resistances of 3 M/spl Omega/ between adjacent array elements.

Keywords

infrared sources; laser cavity resonators; laser transitions; optical crosstalk; semiconductor device packaging; semiconductor epitaxial layers; semiconductor laser arrays; surface emitting lasers; 3 Mohmcm; 3 mum; 400 muA; 813 nm; adjacent array elements; all-epitaxial structure; dense linear vertical-cavity surface-emitting laser array; electrical resistances; high-packing density; independently addressable VCSEL arrays; low interelement thermal crosstalk; planar laterally oxidized device architecture; staggered 3-/spl mu/m pitch; threshold currents; transparent contact technology; Apertures; Contacts; Crosstalk; Electrodes; Optical arrays; Optical surface waves; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.681269

Filename

681269