Title :
Effect of p-contact metallization on the performance of gain-coupled DFBs with oxide-defined surface gratings
Author :
Osowski, M.L. ; Hughes, J.S. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
The effect of p-contact metallization on the performance of a single-growth-step ridge waveguide InGaAs-GaAs distributed feedback (DFB) laser with a silicon dioxide defined titanium surface grating is analyzed. The metallic surface grating introduces a periodic variation of the loss in the cavity to promote single-frequency emission. Device characteristics for DFBs with 50, 150, and 300 /spl Aring/ of titanium are compared. Under continuous-wave (CW) conditions, the devices with a titanium adhesion layer of only 50 /spl Aring/ operate on single-longitudinal and single-lateral modes, with threshold currents of roughly 14 mA, slope efficiencies of 0.16 W/A and sidemode suppression ratios (SMSRs) of greater than 40 dB.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; ridge waveguides; semiconductor device metallisation; waveguide lasers; 14 mA; 150 A; 300 A; 50 A; CW conditions; InGaAs-GaAs; gain-coupled DFBs; metallic surface grating; oxide-defined surface gratings; p-contact metallization; periodic variation; sidemode suppression ratios; silicon dioxide; single-frequency emission; single-growth-step ridge waveguide InGaAs-GaAs DFB laser; single-lateral modes; single-longitudinal modes; slope efficiencies; threshold currents; titanium adhesion layer; titanium surface grating; Distributed feedback devices; Gratings; Laser feedback; Metallization; Performance analysis; Silicon compounds; Surface emitting lasers; Surface waves; Titanium; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
