Title :
1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer
Author :
Kudo, K. ; Ishizaka, M. ; Sasaki, T. ; Yamazaki, H. ; Yamaguchi, M.
Author_Institution :
Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
7/1/1998 12:00:00 AM
Abstract :
We report for the first time different-wavelength modulator-integrated distributed-feedback laser diodes (DFB/MODs) fabricated on a single wafer, whose lasing wavelength cover almost all of the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.527 to 1.593 μm. The devices provided uniform and high-performance characteristics such as a threshold current less than 12 mA and successful transmission of 2.5 Gb/s-600 km through a normal fiber.
Keywords :
distributed feedback lasers; electro-optical modulation; integrated optoelectronics; optical communication equipment; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.527 to 1.593 mum; 12 mA; 2.5 Gbit/s; 600 km; different-wavelength modulator-integrated DFB-LDs; expanded Er-doped fiber amplifier gain band; high-performance characteristics; lasing wavelength; normal fiber; optical communications equipment; optical fibre communication; single wafer; threshold current; Absorption; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Optical fiber communication; Photonic band gap; Quantum well devices; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
