Title :
40 Gbit/s fully monolithic clock recovery IC using InAlAs/InGaAs/InP HEMTs
Author :
Murata, K. ; Yamane, Y.
Author_Institution :
NTT Network Innovation Lab., Kanagawa, Japan
fDate :
9/14/2000 12:00:00 AM
Abstract :
The authors describe a 40 Gbit/s fully monolithic clock recovery integrated circuit (IC) fabricated using 0.1 μm InAlAs/InGaAs/InP HEMTs. The IC utilises injection locking, and consists of a half bit delay, an exclusive OR gate and a T-type flip-flop. The IC extracts a half-rate clock signal from a 39.81312 Gbit/s 231-1 pseudo-random bit sequence signal without any other external components
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; synchronisation; 0.1 micron; 40 Gbit/s; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT; T-type flip-flop; exclusive OR gate; half-bit delay; injection locking; monolithic clock recovery IC; pseudo-random bit sequence signal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001163
