ESD-induced degradation of vertical-cavity surface-emitting lasers

Author

Neitzert, H.C.

Author_Institution

Dipt. di Elettronica, Salerno Univ., Italy

Volume

36

Issue

19

fYear

2000

fDate

9/14/2000 12:00:00 AM

Firstpage

1620

Lastpage

1621

Abstract

The sensitivity of proton implanted, vertical-cavity surface emitting lasers (VCSELs) to electrostatic discharge (ESD) pulses is investigated under human body model test conditions. Rather low degradation threshold pulse amplitudes were observed in forward bias (+1500 V) as well as reverse bias (-800 V) step stress tests. Monitoring both the electrical and optical parameters of the VCSELs during ESD stress, it was found that in forward bias ESD stress tests the optical degradation precedes the electrical degradation

Keywords

III-V semiconductors; aluminium compounds; electrostatic discharge; gallium arsenide; ion implantation; laser beams; laser cavity resonators; semiconductor lasers; sensitivity; surface emitting lasers; -800 V; 1500 V; GaAs-GaAlAs; GaAs/GaAlAs based VCSELs; degradation threshold pulse amplitudes; electrical degradation; electrical parameters; electrostatic discharge pulses; forward bias; forward bias electrostatic discharge stress tests; human body model test conditions; optical degradation; optical parameters; proton implanted vertical-cavity surface emitting lasers; reverse bias; reverse bias electrostatic discharge stress tests; sensitivity; step stress tests; vertical-cavity surface-emitting lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001152

Filename

871150