Title :
Photodiode DC and microwave nonlinearity at high currents due to carrier recombination nonlinearities
Author :
Williams, Keith J. ; Esman, Ronald D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
We present photodetector compression measurements to demonstrate the consequences of absorption in undepleted regions close to the depletion region of p-i-n photodiodes. This absorption can modify the frequency response of photodetectors operating above a few milliamperes. The frequency response shows power dependence and additional ripple and rolloff.
Keywords :
frequency response; nonlinear optics; optical testing; p-i-n photodiodes; photodetectors; semiconductor device testing; additional ripple; additional rolloff; carrier recombination nonlinearities; frequency response; high currents; milliamperes; photodetector compression measurements; photodiode DC nonlinearity; photodiode microwave nonlinearity; power dependence; undepleted region absorption; Absorption; Current measurement; Distributed feedback devices; Electrons; Frequency measurement; Frequency response; Laser feedback; PIN photodiodes; Photodetectors; Radiative recombination;
Journal_Title :
Photonics Technology Letters, IEEE
