New full-voltage-swing BiCMOS buffers

Author

Embabi, S.H.K. ; Bellaouar, A. ; Elmasry, M.I. ; Hadaway, R.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

26

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

150

Lastpage

153

Abstract

Circuit techniques are presented for increasing the voltage swing of BiCMOS buffers through active charging and discharging using complementary bipolar drivers. These BiCMOS circuits offer near rail-to-rail output voltage swing, higher noise margins, and higher speed of operation at scaled-down power supply voltages. The circuits are simulated and compared to BiCMOS and CMOS buffers. The comparison shows that the conventional BiCMOS and the complementary BiCMOS buffers are efficient for power supply voltages greater than 3V and that if the power supply voltage is scaled down (<3 V) and the load capacitance is large (>1 pF), the complementary BiCMOS buffers would be the most suitable choice. They provide high speed and low delay to load sensitivity and high noise margins. The first implementation is favorable near a 2.5-V power supply for its smaller area

Keywords

BIMOS integrated circuits; buffer circuits; 2.5 to 3 V; BiCMOS buffers; complementary bipolar drivers; full-voltage-swing; monolithic IC; scaled-down power supply voltages; BiCMOS integrated circuits; Circuit noise; Circuit simulation; Degradation; Driver circuits; Helium; Low voltage; MOSFET circuits; Power supplies; Rail to rail outputs;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.68131

Filename

68131