Title :
Behaviour of CuInGaSe2 solar cells under light irradiation
Author :
Yanagisawa, T. ; Kojima, T. ; Koyanagi, T. ; Takahisa, K. ; Nakamura, K.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
fDate :
9/14/2000 12:00:00 AM
Abstract :
The behaviour of CIGS solar cells using a light irradiation rest is investigated. The conversion efficiency after the test increases by ~25%. This is mainly due to the increase in Isc and FF and the lowering of the series resistance. It is also shown that the performance of the diode decreases. Because the value of the diode factor increases from 1.9 to 2.4. In addition, the changes in the junction condition and generation of defects are suggested to be based on the measurement of electroluminescence and the photoabsorption current spectrum by the light below the sensitivity of the cell
Keywords :
copper compounds; electroluminescence; gallium compounds; indium compounds; photoconductivity; solar cells; ternary semiconductors; CuInGaSe2; cell sensitivity; conversion efficiency; defect generation; diode factor; electroluminescence; light irradiation; photoabsorption current spectrum; series resistance; solar cells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001176
