Title :
The importance of the non-quasi-static bipolar transistor model for circuit applications
Author_Institution :
Delco Electron. Corp., Kokomo, IN, USA
fDate :
2/1/1991 12:00:00 AM
Abstract :
The need for non-quasi-static bipolar models is examined from a practical viewpoint in order to optimize compensation capacitor value, improve performance, and reduce chip area. This need depends on the circuit under study. The utility of non-quasi-static equivalent circuits in small-signal applications is investigated. The circuit example studied is a lateral p-n-p transistor used as a series pass transistor in a series voltage regulator. For the series voltage regulator, the non-quasi-static inductance model correctly predicts the rapid falloff of the magnitude of the current gain and thus reduces the required internal compensation and subsequent circuit area
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; bipolar transistor model; chip area reduction; circuit applications; compensation capacitor value; current gain; lateral p-n-p transistor; non-quasi-static equivalent circuits; non-quasi-static inductance model; nonquasistatic model; series pass transistor; series voltage regulator; small-signal applications; Bipolar transistors; Charge carrier processes; Circuit simulation; Delay; Frequency; Inductance; Microwave transistors; Predictive models; Regulators; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
