Title :
Extraction and modeling methods for FET devices
Author :
Follmann, R. ; Borkes, J. ; Waldow, P. ; Wolff, I.
Author_Institution :
IMST GmbH, Kamp-Lintfort, Germany
fDate :
9/1/2000 12:00:00 AM
Abstract :
The proposed method is based on spline functions, takes into account thermal and noise effects, allows a scaling of different FET device geometries, and is available in commercial CAD software like Agilents Series IV or ADS
Keywords :
electronic design automation; equivalent circuits; field effect transistors; semiconductor device models; semiconductor device noise; splines (mathematics); ADS; Agilents Series IV; CAD software; FET device geometries; modeling methods; noise effects; spline functions; thermal effects; Capacitance; Circuit simulation; Differential equations; Equivalent circuits; FETs; Frequency; Geometry; Scattering parameters; Semiconductor process modeling; Voltage;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/6668.871187
