Simulated magnetoresistive behavior of geometrically asymmetric spin valves

Author

Oti, J.O. ; Cross, R.W. ; Russek, S.E. ; Kim, Y.K.

Author_Institution

Div. of Electromagn. Technol., Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

4606

Lastpage

4608

Abstract

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 μm long pinned by a transverse field of 16 kA/m and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 μm to 2 μm and magnetic-layer thicknesses from 3 nm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected

Keywords

copper; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic multilayers; magnetisation; magnetoresistive devices; nickel alloys; soft magnetic materials; 0.5 to 2 micron; 3 to 6 nm; 4 micron; NiFe-Cu-NiFe; geometrically asymmetric spin valves; giant magnetoresistance; magnetic layer thicknesses; magnetoresistive response; nonmagnetic spacer thicknesses; optimal device geometries; semi-analytical micromagnetic model; simulated magnetoresistive behavior; spin-valve devices; transverse field; unequal stripe heights; uneven geometries; Electronic mail; Geometry; Giant magnetoresistance; Magnetic anisotropy; Magnetic devices; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Solid modeling; Spin valves;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.539093

Filename

539093