Title :
High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy
Author :
Matsuyama, K. ; Asada, H. ; Ikeda, S. ; Umezu, K. ; Tauiguchi, K.
Author_Institution :
Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
9/1/1996 12:00:00 AM
Abstract :
A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1% (improved from 3.1% due to the application of the deposition field) for NiFe/Cu/Co and 6.3% for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples
Keywords :
Permalloy; cobalt; copper; electron beam deposition; ferromagnetic materials; induced anisotropy (magnetic); magnetic multilayers; magnetoresistance; magnetoresistive devices; photolithography; soft magnetic materials; Ar; Ar ion milling; NiFe-Co-Cu-Co; NiFe-Cu-Co; NiFe/Co/Cu/Co; NiFe/Cu/Co; electron beam evaporation; evaporated spin valves; glass substrate; growth-induced uniaxial anisotropy; induced uniaxial anisotropy; linear magnetoresistive behavior; magnetoresistance; microstrip pattern; patterned samples; photoresist mask; Anisotropic magnetoresistance; Argon; Electron beams; Magnetic anisotropy; Magnetic hysteresis; Magnetostatics; Milling; Perpendicular magnetic anisotropy; Spin valves; Strips;
Journal_Title :
Magnetics, IEEE Transactions on
