Title :
Removal of NF3 from semiconductor-process flue gases by tandem packed-bed plasma and adsorbent hybrid systems
Author :
Chang, Jen-Shih ; Kostov, Konstantin G. ; Urashima, Kuniko ; Yamamoto, Toshiaki ; Okayasu, Yasuji ; Kato, Tadao ; Iwaizumi, Takashi ; Yoshimura, Kazunari
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
A tandem hybrid gas cleanup system, consisting of a BaTiO3 packed-bed plasma reactor and a CaCO3 adsorbent filter, was used to study the removal of NF3 from semiconductor-process flue gases. Plasma-chemical kinetics of N2 -NF3-O2-H2 gas mixtures suggested byproducts observed in the experiments. The laboratory-scale system showed NF3 removal at atmospheric pressure. Typically, 100% NF3 abatement was achieved with an inlet concentration of 5000 ppm and a gas residence time in the reactor less than 10 s
Keywords :
adsorption; air pollution control; gas mixtures; organic compounds; plasma materials processing; reaction kinetics; semiconductor device manufacture; 1 atm; BaTiO3; CaCO3; N2-NF3-O2-H2; N2-NF3-O2-H2 gas mixtures; NF3 removal; adsorbent hybrid systems; atmospheric pressure; gas residence time; inlet concentration; plasma-chemical kinetics; semiconductor-process flue gases; tandem hybrid gas cleanup system; tandem packed-bed plasma; Atmospheric-pressure plasmas; Cleaning; Etching; Flue gases; Inductors; Industry Applications Society; Noise measurement; Physics; Plasma applications; Plasma density;
Journal_Title :
Industry Applications, IEEE Transactions on
