DocumentCode :
1387127
Title :
Topography and its effect on magnetization reversal of coupled NiFeCo film
Author :
Yeh, T. ; Wang, G. ; Berg, L. ; Casey, D. ; Yue, J.
Author_Institution :
Dept. of Chem. Eng., Univ. of Minnesota, MN, USA
Volume :
32
Issue :
5
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
4648
Lastpage :
4650
Abstract :
The manner in which magnetization reversal process of coupled NiFeCo films are affected by various surface topography conditions of integrated circuit (IC) underlayers was examined. The experimental results demonstrated that the topography of underlayers play a significant role in affecting the magnetization reversal characteristics of the coupled films. A hysteresis loop with lower coercivity and homogeneous switching field distribution can be obtained for the coupled films deposited on underlayer with a smooth surface topography. When the coupled films were deposited on underlayers having severe surface topography, a hysteresis loop with higher coercivity and inhomogeneous switching field distribution was obtained. Such behavior may be attributed to induced inhomogeneous coupling in the coupled films due to the severe topography
Keywords :
cobalt alloys; coercive force; ferromagnetic materials; integrated circuit technology; integrated memory circuits; iron alloys; magnetic multilayers; magnetic sensors; magnetic thin films; magnetisation reversal; magnetoresistive devices; nickel alloys; random-access storage; surface topography; NiFeCo; NiFeCo coupled film; coupled films; homogeneous switching field distributio; hysteresis loop; induced inhomogeneous coupling; inhomogeneous switching field distribution; integrated circuit; magnetization reversal; surface topography; topography; underlayers; Atomic force microscopy; Coupling circuits; Fabrication; Magnetic films; Magnetization reversal; Magnetoresistance; Scanning electron microscopy; Semiconductor films; Surface morphology; Surface topography;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.539106
Filename :
539106
Link To Document :
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