Title :
Spin dependent tunneling devices fabricated using photolithography
Author :
Beech, Russell S. ; Anderson, John ; Daughton, Jim ; Everitt, Brenda A. ; Wang, Dexin
Author_Institution :
Nonvolatile Electron. Inc., Eden Prairie, MN, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Spin dependent tunneling (SDT) devices have been fabricated using standard photolithographic techniques. The SDT film was RF sputtered NiFeCo(125 Å)/Al2O3(20 Å)/CoFe. Device resistances ranged from 1 KΩ to 12.9 KΩ for device areas of 1000 μm2 (10 μm X 100 μm) to 84.5 μm2 (6.5 μm X 13 μm), respectively. Peak GMR was over 4% at low bias with saturation fields around 10 Oe. Hard layer switching fields were about 50 Oe. Memory operation was demonstrated using integrated metallization for supplying read/write fields
Keywords :
MIM devices; alumina; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic film stores; magnetic sensors; magnetic switching; magnetic thin film devices; magnetoresistive devices; metallisation; nickel alloys; photolithography; sputtered coatings; tunnelling; 1 to 12.9 kohm; 10 mum; 100 mum; 125 A; 13 mum; 20 A; 6.5 mum; NiFeCo-Al2O3-CoFe; RF sputtered NiFeCo/Al2O3/CoFe; SDT film; device resistances; hard layer switching fields; integrated metallization; low bias; magnetic field sensors; memory operation; peak GMR; photolithographic techniques; photolithography; read/write fields; saturation fields; spin dependent tunneling devices; Giant magnetoresistance; Insulation; Lithography; Magnetic films; Magnetic materials; Magnetic separation; Magnetostatics; Radio frequency; Sputtering; Tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
