DocumentCode :
1387352
Title :
Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect
Author :
Lumpp, Janet K. ; Raman, Sudhakar
Author_Institution :
Dept. of Electr. Eng., Kentucky Univ., Lexington, KY, USA
Volume :
21
Issue :
2
fYear :
1998
fDate :
4/1/1998 12:00:00 AM
Firstpage :
118
Lastpage :
125
Abstract :
The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of X-rays (EDAX) was performed at various points in the cross section to determine the elements present
Keywords :
aluminium compounds; integrated circuit interconnections; laser ablation; laser beam machining; metallisation; micromachining; scanning electron microscopy; thick films; Al; AlN; Cu; EDAX; aluminum nitride substrate; conductor pad; electrical resistance; excimer laser ablation; laser machining; metal sheet; scanning electron microscopy; thick film interconnect; via metallization; Aluminum nitride; Atmospheric measurements; Conductive films; Copper; Laser ablation; Metallization; Scanning electron microscopy; Substrates; Thick films; X-ray lasers;
fLanguage :
English
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part C, IEEE Transactions on
Publisher :
ieee
ISSN :
1083-4400
Type :
jour
DOI :
10.1109/3476.681388
Filename :
681388
Link To Document :
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