Title :
Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP
Author :
Dias, I.F.L. ; Nabet, B. ; Kohl, A. ; Benchimol, J.L. ; Harmand, J.C.
Author_Institution :
Dept. de Fisica, Univ. Estadual de Iondrina, Parana, Brazil
fDate :
6/1/1998 12:00:00 AM
Abstract :
The development of high reflectivity and low electrical resistivity Bragg mirrors is crucial for the emergence of 1.55-μm vertical-cavity surface-emitting lasers (VCSEL´s). Here, we report on three different n-type-doped semiconductor Bragg mirrors which are all lattice-matched to InP. The material systems are InGaAsP-InP, AlGaInAs-AlInAs, and AlGaAsSb-AlAsSb and the layers are designed for 1.55-μm operation. The influence of the structural and intrinsic properties of the different heterostructures on the electrical resistivity and optical reflectivity is analyzed for the three samples.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; electrical resistivity; indium compounds; laser cavity resonators; laser mirrors; laser transitions; reflectivity; semiconductor lasers; surface emitting lasers; 1.55 mum; AlGaAsSb-AlAsSb; AlGaInAs-AlInAs; InGaAsP-InP; InP; VCSEL; electrical characteristics; electrical resistivity; heterostructures; high reflectivity; intrinsic properties; lattice-matched; low electrical resistivity Bragg mirrors; material systems; n-type-doped distributed Bragg mirrors; n-type-doped semiconductor Bragg mirrors; optical characteristics; optical reflectivity; structural properties; vertical-cavity surface-emitting lasers; Electric resistance; Indium phosphide; Mirrors; Optical refraction; Optical surface waves; Reflectivity; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
