Title :
Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing
Author :
Qiu, B.C. ; Bryce, A.C. ; De La Rue, R.M. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
6/1/1998 12:00:00 AM
Abstract :
We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-μm-long active sections and 1000-μm-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-μm-long all-active lasers, and the threshold current is 10 mA higher than for an 800-μm-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm/sup -1/.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser beam effects; laser cavity resonators; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1000 mum; 70 meV; 800 mum; GaInAsP structures; InGaAs-InGaAsP; InGaAs-InGaAsP multiquantum-well structure; Q-switched pulsed Nd:YAG lasers; YAG:Nd; YAl5O12:Nd; active sections; continuous wave; differential shifts; extended cavity lasers; extended cavity-ridge lasers; integrated optoelectronics; intermixed single-mode waveguide; laser irradiation process; laser processing; monolithic integration; passive sections; quantum well lasers; quantum-well intermixing; slope efficiency; threshold current; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Optical control; Optical materials; Optical pulses; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
