High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

Author

Chtioui, Mourad ; Lelarge, Francois ; Enard, Alain ; Pommereau, Frederic ; Carpentier, Daniele ; Marceaux, Alexandre ; Van Dijk, Frédéric ; Achouche, Mohand

Author_Institution

Thales Air Syst., Limours, France

Volume

24

Issue

4

fYear

2012

Firstpage

318

Lastpage

320

Abstract

We have developed a high-performance uni-traveling-carrier (UTC) and a modified uni-traveling-carrier (MUTC) photodiode (PD). We report a comparison between the two devices comprising both a 1.5- μm-thick absorption layer followed by a 0.5-μm-thick transparent collector layer. Both devices showed simultaneously a high responsivity (larger than 0.92 A/W at 1.55 μm), a high saturation current (larger than 100 mA at 10 GHz), and a high linearity (OIP3 of 35 dBm at 10 GHz). Thanks to a partly depleted absorber, the MUTC-PD is demonstrated to achieve a higher bandwidth (more than 20 GHz at high current), while the UTC-PD is demonstrated to achieve a higher saturation current and a less voltage dependent radio-frequency and linearity characteristics.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light absorption; photodetectors; photodiodes; transparency; GaInAs-InP; absorption layer; frequency 10 GHz; high-performance unitraveling-carrier photodiode; linearity characteristics; modified unitraveling-carrier photodiode; partly depleted absorber; saturation current; size 0.5 mum; size 1.5 mum; transparent collector layer; voltage dependent radiofrequency characteristics; wavelength 1.55 mum; Absorption; Current measurement; Indium phosphide; Linearity; Photoconductivity; Photodiodes; Space charge; High power photodiodes; linearity; photodetectors; responsivity; saturation current; uni-traveling-carrier photodiode (UTC-PD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2177965

Filename

6094168