Title :
AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application
Author :
Chang, S.J. ; Chang, C.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1998 12:00:00 AM
Abstract :
We have studied the optical properties of the AlGaInP-GaInP light-emitting diodes (LED´s), with a compressively strained multiquantum-well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can achieve a much faster operation speed and a higher output power. It was also found that a +0.33%, compressive strain can reduce the 10%-90% rise time and/or fall time from 50 to 15 ns. Furthermore, the +0.33% compressive strain can also increase the output power of the MQW AlGaInP-GaInP LED by more than 40%. Such a high operation speed and high output power LED is potentially useful in polymer-based optical fiber communication.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical communication equipment; optical fibre communication; 50 to 15 ns; AlGaInP-GaInP; AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes; AlGaInP-GaInP light-emitting diodes; LED; MQW AlGaInP-GaInP LED; MQW active layer; compressive strain; compressively strained multiquantum-well active layer; fall time; high output power LED; higher output power; operation speed; optical communications equipment; optical properties; polymer fiber application; polymer-based optical fiber communication; rise time; Capacitive sensors; Gallium arsenide; Light emitting diodes; Optical fiber communication; Optical fibers; Optical materials; Optical polymers; Organic light emitting diodes; Power generation; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE